Degradation of β-Ga₂O₃ Schottky barrier diode under swift heavy ion irradiation*

The electrical characteristics and microstructures of $\beta$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that SBD showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n reverse leakage current density Jr. In addition, carrier concentration drift layer decreased significantly calculated removal rates were 5*106 - 1.3*107 cm-1. Latent tracks induced by observed visually in whole matrix. Furthermore, crystal structure amorphized completely. latent bombardments to be reason for decrease mobility concentration. Eventually, these defects caused devices. By comparing rates, more sensitive irradiation than SiC GaN